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IXTN 200 N 10 L2
Littelfuse MOSFETs der Serien IXFN und IXTN
- Leistungs-MOSFETs
- im SOT227B-Gehäuse
- HiPerFET™ / Polar™ / GigaMOS™
IXTN 200 N 10 L2
Technische Daten
| Hersteller | Littelfuse |
| Herstellerbezeichnung | IXTN200N10L2 |
| Gehäuse | SOT227B |
| Max. Drain-Source-Spannung [V] | 100 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,011 |
| Einschaltverzögerungszeit [ns] | 40 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 178 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 127 |