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IXFN 360 N 10 T
Littelfuse MOSFETs der Serien IXFN und IXTN
- Leistungs-MOSFETs
- im SOT227B-Gehäuse
- HiPerFET™ / Polar™ / GigaMOS™
IXFN 360 N 10 T
Technische Daten
| Hersteller | Littelfuse |
| Herstellerbezeichnung | IXFN360N10T |
| Gehäuse | SOT227B |
| Max. Drain-Source-Spannung [V] | 100 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,0026 |
| Einschaltverzögerungszeit [ns] | 47 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 360 |
| Gate-Schwellenspannung, min. [V] | 2,5 |
| Ausschaltverzögerungszeit [ns] | 80 |