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IXFN 60 N 80 P
Littelfuse MOSFETs der Serien IXFN und IXTN
- Leistungs-MOSFETs
- im SOT227B-Gehäuse
- HiPerFET™ / Polar™ / GigaMOS™
IXFN 60 N 80 P
Auslaufartikel, nur noch der Lagerbestand verfügbar.
Technische Daten
| Hersteller | Littelfuse |
| Herstellerbezeichnung | IXFN60N80P |
| Gehäuse | SOT227B |
| Max. Drain-Source-Spannung [V] | 800 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,14 |
| Einschaltverzögerungszeit [ns] | 36 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 53 |
| Gate-Schwellenspannung, min. [V] | 3 |
| Ausschaltverzögerungszeit [ns] | 110 |