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SPP 11 N 60 C3
Infineon MOSFETs der Serie SPA und SPP
- Leistungs-MOSFETs
- im TO220- bzw. TO220-Fullpak-Gehäuse
- CoolMOS™ / SIPMOS™
SPP 11 N 60 C3
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | SPP11N60C3XKSA1 |
| Gehäuse | TO220 |
| Max. Drain-Source-Spannung [V] | 600 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,38 |
| Einschaltverzögerungszeit [ns] | 10 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 11 |
| Gate-Schwellenspannung, min. [V] | 2,1 |
| Ausschaltverzögerungszeit [ns] | 44 |