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IRLR 120 N
Infineon SMD MOSFETs der Serien IRFR und IRLR
- SMD-Leistungs-MOSFETs
- im TO252AA-Gehäuse
- International Rectifier HEXFET®
- lose und gegurtet (IRFR/IRLR_ reel)
IRLR 120 N
Auslaufartikel, nur noch der Lagerbestand verfügbar.
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IRLR120NPBF |
| Gehäuse | TO252AA |
| Max. Drain-Source-Spannung [V] | 100 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,185 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 10 |