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IRFP 4229
Infineon MOSFETs der Serien IRFP und IRLP
- Leistungs-MOSFETs
- International Rectifier HEXFET®
- im TO247AC-Gehäuse
IRFP 4229
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IRFP4229PBF |
| Gehäuse | TO247AC |
| Max. Drain-Source-Spannung [V] | 250 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,046 |
| Einschaltverzögerungszeit [ns] | 25 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 44 |
| Gate-Schwellenspannung, min. [V] | 3 |
| Ausschaltverzögerungszeit [ns] | 44 |