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IRLB 3813
Infineon MOSFETs der Serien IRF und IRL
- Leistungs-MOSFETs
- im TO220AB-Gehäuse
- mit einem geringen Drain-Source-Durchlasswiderstand
IRLB 3813
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IRLB3813PBF |
| Gehäuse | TO220AB |
| Max. Drain-Source-Spannung [V] | 30 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,00195 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 260 |