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IRF 9 Z 24 N
Infineon MOSFETs der Serien IRF und IRL
- Leistungs-MOSFETs
- im TO220AB-Gehäuse
- mit einem geringen Drain-Source-Durchlasswiderstand
IRF 9 Z 24 N
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IRF9Z24NPBF |
| Gehäuse | TO220AB |
| Max. Drain-Source-Spannung [V] | 55 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,175 |
| Einschaltverzögerungszeit [ns] | 13 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 12 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 23 |