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IRLZ 24 N
Infineon MOSFETs der Serien IRF und IRL
- Leistungs-MOSFETs
- im TO220AB-Gehäuse
- mit einem geringen Drain-Source-Durchlasswiderstand
IRLZ 24 N
Auslaufartikel, nur noch der Lagerbestand verfügbar.
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IRLZ24NPBF |
| Gehäuse | TO220AB |
| Max. Drain-Source-Spannung [V] | 55 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,06 |
| Einschaltverzögerungszeit [ns] | 7,1 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 18 |
| Gate-Schwellenspannung, min. [V] | 1 |
| Ausschaltverzögerungszeit [ns] | 20 |