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IRF 640 N
Infineon MOSFETs der Serien IRF und IRL
- Leistungs-MOSFETs
- im TO220AB-Gehäuse
- mit einem geringen Drain-Source-Durchlasswiderstand
IRF 640 N
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IRF640NPBF |
| Gehäuse | TO220AB |
| Max. Drain-Source-Spannung [V] | 200 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,15 |
| Einschaltverzögerungszeit [ns] | 10 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 18 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 23 |