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Infineon DirectFET-MOSFETs der Serie IRF
- IR SMD DirectFET-Leistungs-MOSFETs
- im MX-, MZ- und SQ-Gehäuse
- DirectFET™ / HEXFET®
IRF 6622
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Technische Daten
| Gehäuse | SQ |
| Max. Drain-Source-Spannung [V] | 25 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,0063 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 15 |