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IRL 2910 S
Infineon SMD MOSFETs der Serien IRF/IRFS/IRL/IRLS
- SMD-Leistungs-MOSFETs
- im D²Pak-Gehäuse
- International Rectifier HEXFET®
- lose und gegurtet (IRF_/IRL_ reel)
IRL 2910 S
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IRL2910STRLPBF |
| Gehäuse | D²Pak |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 100 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,026 |
| Einschaltverzögerungszeit [ns] | 11 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 55 |
| Gate-Schwellenspannung, min. [V] | 1 |
| Ausschaltverzögerungszeit [ns] | 49 |