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IPP 60 R 190 E6
Infineon MOSFETs der Serien IPA und IPP
- Leistungs-MOSFETs
- im TO220- bzw. TO220-Fullpak-Gehäuse
- einfach zu betreiben
- CoolMOS™
IPP 60 R 190 E6
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IPP60R190E6XKSA1 |
| Gehäuse | TO220 |
| Max. Drain-Source-Spannung [V] | 600 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,19 |
| Einschaltverzögerungszeit [ns] | 12 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 20,2 |
| Gate-Schwellenspannung, min. [V] | 2,5 |
| Ausschaltverzögerungszeit [ns] | 90 |