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IKW30N65ES5XKSA1
Infineon IGBTs der Serien IKW/IRG/IKQ
- IGBTs mit Fast Recovery Epitaxial Dioden (FRED)
- im TO247-3- / TO247AA- / TO247AC-Gehäuse
- TRENCHSTOP™
IKW30N65ES5XKSA1
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IKW30N65ES5XKSA1 |
| Gehäuse | TO247-3 |
| Verlustleistung [W] | 188 |
| Einschaltverzögerungszeit [ns] | 17 |
| Gate-Schwellenspannung, min. [V] | 3,2 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 650 |
| Ausschaltverzögerungszeit [ns] | 149 |
| Max. Kollektorstrom, gepulst [A] | 120 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 62 |