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IGZ 100 N 65 H5
Infineon IGBTs der Serien IGW/IGZ/IKW/IKZ
- Bipolartransistoren mit isolierter Gate-Elektrode (IGBTs)
- im TO247-Gehäuse
- TRENCHSTOP™
IGZ 100 N 65 H5
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IGZ100N65H5XKSA1 |
| Gehäuse | TO247-4 |
| Verlustleistung [W] | 536 |
| Einschaltverzögerungszeit [ns] | 30 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 650 |
| Gate-Schwellenspannung, min. [V] | 3,2 |
| Max. Kollektorstrom, gepulst [A] | 400 |
| Ausschaltverzögerungszeit [ns] | 421 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 161 |