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IGW 50 N 65 H5
Infineon IGBTs der Serien IGW/IGZ/IKW/IKZ
- Bipolartransistoren mit isolierter Gate-Elektrode (IGBTs)
- im TO247-Gehäuse
- TRENCHSTOP™
IGW 50 N 65 H5
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IGW50N65H5FKSA1 |
| Gehäuse | TO247 |
| Verlustleistung [W] | 305 |
| Einschaltverzögerungszeit [ns] | 21 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 650 |
| Gate-Schwellenspannung, min. [V] | 3,2 |
| Max. Kollektorstrom, gepulst [A] | 150 |
| Ausschaltverzögerungszeit [ns] | 180 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 80 |