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IKD10N60RC2ATMA1
Infineon IGBTs der Serien IGD und IKD
- verlustarme IGBTs
- im TO252-Gehäuse
- TRENCHSTOP™ und Fieldstop Technologie
- gegurtet
IKD10N60RC2ATMA1
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IKD10N60RC2ATMA1 |
| Gehäuse | TO252 |
| Ausführung | gegurtet |
| Verlustleistung [W] | 79 |
| Einschaltverzögerungszeit [ns] | 14 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 600 |
| Gate-Schwellenspannung, min. [V] | 4,3 |
| Max. Kollektorstrom, gepulst [A] | 30 |
| Ausschaltverzögerungszeit [ns] | 250 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 18,8 |