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IKD 03 N 60 RF
Infineon IGBTs der Serien IGD und IKD
- verlustarme IGBTs
- im TO252-Gehäuse
- TRENCHSTOP™ und Fieldstop Technologie
- gegurtet
IKD 03 N 60 RF
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IKD03N60RFATMA1 |
| Gehäuse | TO252 |
| Ausführung | gegurtet |
| Verlustleistung [W] | 53,6 |
| Einschaltverzögerungszeit [ns] | 10 |
| Gate-Schwellenspannung, min. [V] | 4,3 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 600 |
| Ausschaltverzögerungszeit [ns] | 128 |
| Max. Kollektorstrom, gepulst [A] | 7,5 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 5 |