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IGB 20 N 60 H3
Infineon SMD IGBTs der Serien IGB und IKB
- SMD-Bipolartransistor mit isolierter Gate-Elektrode (SMD IGBTs)
- im D²Pak-Gehäuse (TO263-3)
- TRENCHSTOP™
- gegurtet
IGB 20 N 60 H3
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IGB20N60H3ATMA1 |
| Gehäuse | D²Pak |
| Verlustleistung [W] | 170 |
| Einschaltverzögerungszeit [ns] | 16 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 600 |
| Gate-Schwellenspannung, min. [V] | 4,1 |
| Max. Kollektorstrom, gepulst [A] | 80 |
| Ausschaltverzögerungszeit [ns] | 194 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 40 |