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Infineon MOSFETs der Serie CoolMOS
- Leistungs-MOSFETs
- im TO247-Gehäuse
- einfach zu betreiben
IPZ 65 R 065 C7
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IPZ65R065C7XKSA1 |
| Gehäuse | TO247-4 |
| Max. Drain-Source-Spannung [V] | 650 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,065 |
| Einschaltverzögerungszeit [ns] | 16 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 33 |
| Gate-Schwellenspannung, min. [V] | 3,0 |
| Ausschaltverzögerungszeit [ns] | 72 |